RF modelling of semiconductor devices
This report focuses on the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region with different dimensions.
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2008
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sg-ntu-dr.10356-28682023-03-04T03:21:10Z RF modelling of semiconductor devices Ma, Jian-Guo Yeo, Kiat Seng Do, Manh Anh School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This report focuses on the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region with different dimensions. RG 15/99 2008-09-17T09:16:01Z 2008-09-17T09:16:01Z 2003 2003 Research Report http://hdl.handle.net/10356/2868 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Ma, Jian-Guo Yeo, Kiat Seng Do, Manh Anh RF modelling of semiconductor devices |
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This report focuses on the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region with different dimensions. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Ma, Jian-Guo Yeo, Kiat Seng Do, Manh Anh |
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Research Report |
author |
Ma, Jian-Guo Yeo, Kiat Seng Do, Manh Anh |
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Ma, Jian-Guo |
title |
RF modelling of semiconductor devices |
title_short |
RF modelling of semiconductor devices |
title_full |
RF modelling of semiconductor devices |
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RF modelling of semiconductor devices |
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RF modelling of semiconductor devices |
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rf modelling of semiconductor devices |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/2868 |
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1759854548223000576 |