A study of dilute nitride-antimonide semiconductors for near infrared optoelectronics devices

• المؤلف الرئيسي: Tan, Kian Hua
• مؤلفون آخرون: Yoon Soon Fatt
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/42311
• المؤسسة: Nanyang Technological University

In this thesis, GaNAsSb-based optoelectronic device structures were grown using a solid-source molecular beam epitaxy (MBE) system in conjunction with a radio frequency (RF) plasma N source and Sb valved-cracker source. To reduce the nitrogen plasma induced defects, an ion deflection plate has been...