A study of dilute nitride-antimonide semiconductors for near infrared optoelectronics devices

In this thesis, GaNAsSb-based optoelectronic device structures were grown using a solid-source molecular beam epitaxy (MBE) system in conjunction with a radio frequency (RF) plasma N source and Sb valved-cracker source. To reduce the nitrogen plasma induced defects, an ion deflection plate has been...

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Bibliographic Details
Main Author: Tan, Kian Hua
Other Authors: Yoon Soon Fatt
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Online Access:https://hdl.handle.net/10356/42311
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Institution: Nanyang Technological University
Language: English