Giant and zero electron g factors of dilute nitride semiconductor nanowires

The electronic structures and electron g factors of InSb1−sNs and GaAs1−sNs nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k· p model. The nitrogen doping has direct and indirect effects on the g factors. A giant g factor with absolute va...

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Main Authors:	Zhang, X. W., Li, S. S., Fan, Weijun, Xia, Jian-Bai
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	https://hdl.handle.net/10356/100825 http://hdl.handle.net/10220/18131
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-1008252020-03-07T14:00:32Z Giant and zero electron g factors of dilute nitride semiconductor nanowires Zhang, X. W. Li, S. S. Fan, Weijun Xia, Jian-Bai School of Electrical and Electronic Engineering Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China DRNTU::Engineering::Electrical and electronic engineering::Semiconductors The electronic structures and electron g factors of InSb1−sNs and GaAs1−sNs nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k· p model. The nitrogen doping has direct and indirect effects on the g factors. A giant g factor with absolute value larger than 900 is found in InSb1−sNs bulk material. A transverse electric field can increase the g factors, which has obviously asymmetric effects on the g factors in different directions. An electric field tunable zero g factor is found in GaAs1−sNs nanowires. Published version 2013-12-06T04:39:51Z 2019-12-06T20:29:00Z 2013-12-06T04:39:51Z 2019-12-06T20:29:00Z 2007 2007 Journal Article Zhang, X. W., Fan, W., Li, S. S., & Xia, J.-B. (2007). Giant and zero electron g factors of dilute nitride semiconductor nanowires. Applied physics letters, 90(19), 193111. 0003-6951 https://hdl.handle.net/10356/100825 http://hdl.handle.net/10220/18131 10.1063/1.2728749 en Applied physics letters © 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2728749. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Zhang, X. W. Li, S. S. Fan, Weijun Xia, Jian-Bai Giant and zero electron g factors of dilute nitride semiconductor nanowires
description	The electronic structures and electron g factors of InSb1−sNs and GaAs1−sNs nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k· p model. The nitrogen doping has direct and indirect effects on the g factors. A giant g factor with absolute value larger than 900 is found in InSb1−sNs bulk material. A transverse electric field can increase the g factors, which has obviously asymmetric effects on the g factors in different directions. An electric field tunable zero g factor is found in GaAs1−sNs nanowires.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Zhang, X. W. Li, S. S. Fan, Weijun Xia, Jian-Bai
format	Article
author	Zhang, X. W. Li, S. S. Fan, Weijun Xia, Jian-Bai
author_sort	Zhang, X. W.
title	Giant and zero electron g factors of dilute nitride semiconductor nanowires
title_short	Giant and zero electron g factors of dilute nitride semiconductor nanowires
title_full	Giant and zero electron g factors of dilute nitride semiconductor nanowires
title_fullStr	Giant and zero electron g factors of dilute nitride semiconductor nanowires
title_full_unstemmed	Giant and zero electron g factors of dilute nitride semiconductor nanowires
title_sort	giant and zero electron g factors of dilute nitride semiconductor nanowires
publishDate	2013
url	https://hdl.handle.net/10356/100825 http://hdl.handle.net/10220/18131
_version_	1681038400021331968

Giant and zero electron g factors of dilute nitride semiconductor nanowires

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