Giant and zero electron g factors of dilute nitride semiconductor nanowires

• Main Authors: Zhang, X. W., Li, S. S., Fan, Weijun, Xia, Jian-Bai
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/100825; http://hdl.handle.net/10220/18131
• Institution: Nanyang Technological University

The electronic structures and electron g factors of InSb1−sNs and GaAs1−sNs nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k· p model. The nitrogen doping has direct and indirect effects on the g factors. A giant g factor with absolute va...