Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots

• المؤلفون الرئيسيون: Fan, Weijun, Xia, Jian-Bai, Li, S. S., Zhang, X. W.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: Electrical and Electronic Engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100822; http://hdl.handle.net/10220/18126
• المؤسسة: Nanyang Technological University

The electronic structure, electron g factor, and Stark effect of InAs1−xNx quantum dots are studied by using the ten-band k· p model. It is found that the g factor can be tuned to be zero by the shape and size of quantum dots, nitrogen N doping, and the electric field. The N doping has two effec...