Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots
The electronic structure, electron g factor, and Stark effect of InAs1−xNx quantum dots are studied by using the ten-band k· p model. It is found that the g factor can be tuned to be zero by the shape and size of quantum dots, nitrogen N doping, and the electric field. The N doping has two effec...
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sg-ntu-dr.10356-1008222020-03-07T14:00:32Z Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots Fan, Weijun Xia, Jian-Bai Li, S. S. Zhang, X. W. School of Electrical and Electronic Engineering Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Electrical and Electronic Engineering The electronic structure, electron g factor, and Stark effect of InAs1−xNx quantum dots are studied by using the ten-band k· p model. It is found that the g factor can be tuned to be zero by the shape and size of quantum dots, nitrogen N doping, and the electric field. The N doping has two effects on the g factor: the direct effect increases the g factor and the indirect effect decreases it. The Stark effect in quantum ellipsoids is high asymmetrical and the asymmetry factor may be 319. Published version 2013-12-06T04:21:28Z 2019-12-06T20:28:56Z 2013-12-06T04:21:28Z 2019-12-06T20:28:56Z 2007 2007 Journal Article Zhang, X. W., Fan, W., Li, S. S., & Xia, J.-B. (2007). Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots. Applied physics letters, 90(15), 153103. 0003-6951 https://hdl.handle.net/10356/100822 http://hdl.handle.net/10220/18126 10.1063/1.2721130 en Applied physics letters © 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2721130. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
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Electrical and Electronic Engineering Fan, Weijun Xia, Jian-Bai Li, S. S. Zhang, X. W. Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots |
| description |
The electronic structure, electron g factor, and Stark effect of InAs1−xNx quantum dots are studied
by using the ten-band k· p model. It is found that the g factor can be tuned to be zero by the shape
and size of quantum dots, nitrogen N doping, and the electric field. The N doping has two effects
on the g factor: the direct effect increases the g factor and the indirect effect decreases it. The Stark
effect in quantum ellipsoids is high asymmetrical and the asymmetry factor may be 319. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Fan, Weijun Xia, Jian-Bai Li, S. S. Zhang, X. W. |
| format |
Article |
| author |
Fan, Weijun Xia, Jian-Bai Li, S. S. Zhang, X. W. |
| author_sort |
Fan, Weijun |
| title |
Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots |
| title_short |
Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots |
| title_full |
Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots |
| title_fullStr |
Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots |
| title_full_unstemmed |
Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots |
| title_sort |
electric field tunable electron g factor and high asymmetrical stark effect in inas[sub 1−x]n[sub x] quantum dots |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/100822 http://hdl.handle.net/10220/18126 |
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1681037333656240128 |