Intersubband photoluminescence from III-nitride multiple quantum wells

This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the F...

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主要作者: Carter, Dale
其他作者: School of Electrical and Electronic Engineering
格式: Final Year Project
語言:English
出版: 2012
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在線閱讀:http://hdl.handle.net/10356/50145
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機構: Nanyang Technological University
語言: English