Intersubband photoluminescence from III-nitride multiple quantum wells

Intersubband photoluminescence from III-nitride multiple quantum wells

This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the F...

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Main Author: Carter, Dale
Other Authors: School of Electrical and Electronic Engineering
Format: Final Year Project
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/50145
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-501452023-07-07T17:11:01Z Intersubband photoluminescence from III-nitride multiple quantum wells Carter, Dale School of Electrical and Electronic Engineering Wang Qijie DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the FTIR system, simulation to obtain each wave function and all measurements related to the structure. Bachelor of Engineering 2012-05-30T04:27:48Z 2012-05-30T04:27:48Z 2012 2012 Final Year Project (FYP) http://hdl.handle.net/10356/50145 en Nanyang Technological University 51 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Carter, Dale
Intersubband photoluminescence from III-nitride multiple quantum wells
description This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the FTIR system, simulation to obtain each wave function and all measurements related to the structure.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Carter, Dale
format Final Year Project
author Carter, Dale
author_sort Carter, Dale
title Intersubband photoluminescence from III-nitride multiple quantum wells
title_short Intersubband photoluminescence from III-nitride multiple quantum wells
title_full Intersubband photoluminescence from III-nitride multiple quantum wells
title_fullStr Intersubband photoluminescence from III-nitride multiple quantum wells
title_full_unstemmed Intersubband photoluminescence from III-nitride multiple quantum wells
title_sort intersubband photoluminescence from iii-nitride multiple quantum wells
publishDate 2012
url http://hdl.handle.net/10356/50145
_version_ 1772827506784600064

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