Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells
III-V compounds consisting of nitrogen are candidates for interband transition applications because of their small band gap due to the nitrogen (N) incoporation. In addition, there is renewed interest in their possible applications in intersubband transition based devices owing to its large conducti...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 出版: |
2008
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/4196 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|