Interdiffusion in narrow InGaAsN∕GaAs quantum wells

• المؤلفون الرئيسيون: Liu, W., Zhang, Dao Hua, Huang, Z. M., Wang, S. Z., Yoon, Soon Fatt, Fan, Weijun, Liu, C. J., Wee, A. T. S.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100809; http://hdl.handle.net/10220/18165
• المؤسسة: Nanyang Technological University

Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry show...