Interdiffusion in narrow InGaAsN∕GaAs quantum wells
Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry show...
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Main Authors: | , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100809 http://hdl.handle.net/10220/18165 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and
4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of
206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass
spectrometry showed that both In–Ga and N–As interdiffusions played key roles for the large
blueshifts. The significant In–Ga interdiffusion occurred at 650 °C while the N diffusion occurred
at a temperature above 700 °C. The theoretical results are in good agreement with the experimental
observations. |
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