Interdiffusion in narrow InGaAsN∕GaAs quantum wells

• Main Authors: Liu, W., Zhang, Dao Hua, Huang, Z. M., Wang, S. Z., Yoon, Soon Fatt, Fan, Weijun, Liu, C. J., Wee, A. T. S.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/100809; http://hdl.handle.net/10220/18165
• 機構: Nanyang Technological University

Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In–Ga and N–As interdiffusions played key roles for the large blueshifts. The significant In–Ga interdiffusion occurred at 650 °C while the N diffusion occurred at a temperature above 700 °C. The theoretical results are in good agreement with the experimental observations.