Interdiffusion in narrow InGaAsN∕GaAs quantum wells
Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry show...
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Main Authors: | Liu, W., Zhang, Dao Hua, Huang, Z. M., Wang, S. Z., Yoon, Soon Fatt, Fan, Weijun, Liu, C. J., Wee, A. T. S. |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100809 http://hdl.handle.net/10220/18165 |
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Institution: | Nanyang Technological University |
Language: | English |
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