Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method

Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method

The interdiffusion effect of GaInNAs/GaAs single quantum well sQWd has been investigated with the eight-band k· p method. The as-grown 64-Å Ga0.64In0.36N0.017As0.983 /250-Å GaAs QW is experimentally determined to emit at 1.27 mm in the literature. The compositional profile of the QW after interdiffu...

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Bibliographic Details
Main Authors: Dang, Y. X., Fan, Weijun, Ng, S. T., Yoon, Soon Fatt, Zhang, Dao Hua
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Science::Physics::Atomic physics::Quantum theory
Online Access:https://hdl.handle.net/10356/100604
http://hdl.handle.net/10220/17991
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/100604
http://hdl.handle.net/10220/17991

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