Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method

The interdiffusion effect of GaInNAs/GaAs single quantum well sQWd has been investigated with the eight-band k· p method. The as-grown 64-Å Ga0.64In0.36N0.017As0.983 /250-Å GaAs QW is experimentally determined to emit at 1.27 mm in the literature. The compositional profile of the QW after interdiffu...

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Main Authors: Dang, Y. X., Fan, Weijun, Ng, S. T., Yoon, Soon Fatt, Zhang, Dao Hua
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/100604
http://hdl.handle.net/10220/17991
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spelling sg-ntu-dr.10356-1006042020-03-07T14:00:28Z Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method Dang, Y. X. Fan, Weijun Ng, S. T. Yoon, Soon Fatt Zhang, Dao Hua School of Electrical and Electronic Engineering DRNTU::Science::Physics::Atomic physics::Quantum theory The interdiffusion effect of GaInNAs/GaAs single quantum well sQWd has been investigated with the eight-band k· p method. The as-grown 64-Å Ga0.64In0.36N0.017As0.983 /250-Å GaAs QW is experimentally determined to emit at 1.27 mm in the literature. The compositional profile of the QW after interdiffusion is modeled by an error function distribution. Varying the diffusion length, the effects of interdiffusion on the unstrained band gap, in-plain strain, and confinement profiles are studied. The curve of the ground-state transition (C1-HH1) energy dependence on the interdiffusion length is obtained. Our work shows that the interdiffusion effect on the strain can greatly change the confinement profile of the lighthole (LH), which is confined in the GaAs layer, not in the GaInNAs layer. From the transition energy curve, a blueshift of 51 meV is derived. This interdiffusion mechanism can be utilized in the tuning of the laser operation wavelength. Published version 2013-12-02T08:44:43Z 2019-12-06T20:25:15Z 2013-12-02T08:44:43Z 2019-12-06T20:25:15Z 2005 2005 Journal Article Dang, Y. X., Fan, W., Ng, S. T., Yoon, S. F., & Zhang, D. H. (2005). Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3 μm by eight-band k⋅p method. Journal of applied physics, 97(10), 103718. 0021-8979 https://hdl.handle.net/10356/100604 http://hdl.handle.net/10220/17991 10.1063/1.1899226 en Journal of applied physics © 2005 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1899226].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Science::Physics::Atomic physics::Quantum theory
spellingShingle DRNTU::Science::Physics::Atomic physics::Quantum theory
Dang, Y. X.
Fan, Weijun
Ng, S. T.
Yoon, Soon Fatt
Zhang, Dao Hua
Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method
description The interdiffusion effect of GaInNAs/GaAs single quantum well sQWd has been investigated with the eight-band k· p method. The as-grown 64-Å Ga0.64In0.36N0.017As0.983 /250-Å GaAs QW is experimentally determined to emit at 1.27 mm in the literature. The compositional profile of the QW after interdiffusion is modeled by an error function distribution. Varying the diffusion length, the effects of interdiffusion on the unstrained band gap, in-plain strain, and confinement profiles are studied. The curve of the ground-state transition (C1-HH1) energy dependence on the interdiffusion length is obtained. Our work shows that the interdiffusion effect on the strain can greatly change the confinement profile of the lighthole (LH), which is confined in the GaAs layer, not in the GaInNAs layer. From the transition energy curve, a blueshift of 51 meV is derived. This interdiffusion mechanism can be utilized in the tuning of the laser operation wavelength.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Dang, Y. X.
Fan, Weijun
Ng, S. T.
Yoon, Soon Fatt
Zhang, Dao Hua
format Article
author Dang, Y. X.
Fan, Weijun
Ng, S. T.
Yoon, Soon Fatt
Zhang, Dao Hua
author_sort Dang, Y. X.
title Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method
title_short Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method
title_full Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method
title_fullStr Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method
title_full_unstemmed Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method
title_sort study of interdiffusion in gainnas∕gaas quantum well structure emitting at 1.3μm by eight-band k⋅p method
publishDate 2013
url https://hdl.handle.net/10356/100604
http://hdl.handle.net/10220/17991
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