The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers

• Main Authors: Zhao, Hanxue, Fatt, Yoon Soon, Yong, Ngo Chun, Wang, Rui
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/104901; http://hdl.handle.net/10220/16819; http://dx.doi.org/10.1002/pssc.201100266
• Institution: Nanyang Technological University

In this work, we investigated the optical characteristics of 1.3 µm p -doped InAs/InGaAs/GaAs quantum dot (QD) lasers that consist of either as-grown or annealed QDs. With reference to the as-grown QD lasers, it is found that 1) the integrated intensity of the photoluminescence could be increased by...