Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission

GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is...

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Bibliographic Details
Main Authors: Liang, Y. Y., Ngo, C. Y., Fitzgerald, Eugene A., Yoon, Soon Fatt, Loke, Wan Khai
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/95991
http://hdl.handle.net/10220/11368
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Institution: Nanyang Technological University
Language: English