Interdiffusion in narrow InGaAsN∕GaAs quantum wells

Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry show...

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Main Authors: Liu, W., Zhang, Dao Hua, Huang, Z. M., Wang, S. Z., Yoon, Soon Fatt, Fan, Weijun, Liu, C. J., Wee, A. T. S.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/100809
http://hdl.handle.net/10220/18165
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1008092020-03-07T14:00:32Z Interdiffusion in narrow InGaAsN∕GaAs quantum wells Liu, W. Zhang, Dao Hua Huang, Z. M. Wang, S. Z. Yoon, Soon Fatt Fan, Weijun Liu, C. J. Wee, A. T. S. School of Electrical and Electronic Engineering Department of Physics, National University of Singapore DRNTU::Engineering::Electrical and electronic engineering Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In–Ga and N–As interdiffusions played key roles for the large blueshifts. The significant In–Ga interdiffusion occurred at 650 °C while the N diffusion occurred at a temperature above 700 °C. The theoretical results are in good agreement with the experimental observations. Published version 2013-12-09T01:22:34Z 2019-12-06T20:28:42Z 2013-12-09T01:22:34Z 2019-12-06T20:28:42Z 2007 2007 Journal Article Liu, W., Zhang, D. H., Huang, Z. M., Wang, S. Z., Yoon, S. F., Fan, W., Liu, C. J., & Wee, A. T. S. (2007). Interdiffusion in narrow InGaAsN∕GaAs quantum wells. Journal of applied physics, 101, 103111. 0021-8979 https://hdl.handle.net/10356/100809 http://hdl.handle.net/10220/18165 10.1063/1.2736943 en Journal of applied physics © 2007 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2736943.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Liu, W.
Zhang, Dao Hua
Huang, Z. M.
Wang, S. Z.
Yoon, Soon Fatt
Fan, Weijun
Liu, C. J.
Wee, A. T. S.
Interdiffusion in narrow InGaAsN∕GaAs quantum wells
description Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In–Ga and N–As interdiffusions played key roles for the large blueshifts. The significant In–Ga interdiffusion occurred at 650 °C while the N diffusion occurred at a temperature above 700 °C. The theoretical results are in good agreement with the experimental observations.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Liu, W.
Zhang, Dao Hua
Huang, Z. M.
Wang, S. Z.
Yoon, Soon Fatt
Fan, Weijun
Liu, C. J.
Wee, A. T. S.
format Article
author Liu, W.
Zhang, Dao Hua
Huang, Z. M.
Wang, S. Z.
Yoon, Soon Fatt
Fan, Weijun
Liu, C. J.
Wee, A. T. S.
author_sort Liu, W.
title Interdiffusion in narrow InGaAsN∕GaAs quantum wells
title_short Interdiffusion in narrow InGaAsN∕GaAs quantum wells
title_full Interdiffusion in narrow InGaAsN∕GaAs quantum wells
title_fullStr Interdiffusion in narrow InGaAsN∕GaAs quantum wells
title_full_unstemmed Interdiffusion in narrow InGaAsN∕GaAs quantum wells
title_sort interdiffusion in narrow ingaasn∕gaas quantum wells
publishDate 2013
url https://hdl.handle.net/10356/100809
http://hdl.handle.net/10220/18165
_version_ 1681046770086313984