Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells

• Main Authors: Dang, Y. X., Fan, Weijun, Lu, F., Wang, H., Zhang, Dao Hua, Yoon, Soon Fatt
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100603; http://hdl.handle.net/10220/17896
• Institution: Nanyang Technological University

We investigated the influence of thermal interdiffusion on the band structures of Si1−xGex /Si single quantum wells SQWs with a well width of 125 Å and Ge concentration x=0.3. Rapid thermal annealing with the temperatures of 750 and 800 °C leads to substantial interdiffusion indicated by a sign...