Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells

• Main Author: Dang, Yuxing
• Other Authors: Fan Weijun
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: https://hdl.handle.net/10356/4196
• Institution: Nanyang Technological University

III-V compounds consisting of nitrogen are candidates for interband transition applications because of their small band gap due to the nitrogen (N) incoporation. In addition, there is renewed interest in their possible applications in intersubband transition based devices owing to its large conducti...