Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells

Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells

III-V compounds consisting of nitrogen are candidates for interband transition applications because of their small band gap due to the nitrogen (N) incoporation. In addition, there is renewed interest in their possible applications in intersubband transition based devices owing to its large conducti...

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Main Author: Dang, Yuxing
Other Authors: Fan Weijun
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:https://hdl.handle.net/10356/4196
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-4196
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spelling sg-ntu-dr.10356-41962023-07-04T16:44:13Z Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells Dang, Yuxing Fan Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials III-V compounds consisting of nitrogen are candidates for interband transition applications because of their small band gap due to the nitrogen (N) incoporation. In addition, there is renewed interest in their possible applications in intersubband transition based devices owing to its large conduction band offset. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:46:30Z 2008-09-17T09:46:30Z 2007 2007 Thesis Dang, Y. (2007). Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/4196 10.32657/10356/4196 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Dang, Yuxing
Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells
description III-V compounds consisting of nitrogen are candidates for interband transition applications because of their small band gap due to the nitrogen (N) incoporation. In addition, there is renewed interest in their possible applications in intersubband transition based devices owing to its large conduction band offset.
author2 Fan Weijun
author_facet Fan Weijun
Dang, Yuxing
format Theses and Dissertations
author Dang, Yuxing
author_sort Dang, Yuxing
title Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells
title_short Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells
title_full Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells
title_fullStr Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells
title_full_unstemmed Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells
title_sort intersubband transitions and anneal-induced interdiffusion effects in iii-v-n quantum wells
publishDate 2008
url https://hdl.handle.net/10356/4196
_version_ 1772827736710053888

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