Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction

• Main Authors: Du, Jingxue, Yang, Jing, Fan, Weijun, Shi, Lijie
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2023
• 主題: Engineering::Electrical and electronic engineering; Phase Transition; Band Offset
• 在線閱讀: https://hdl.handle.net/10356/172512
• 機構: Nanyang Technological University

The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal...