Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction

• المؤلفون الرئيسيون: Du, Jingxue, Yang, Jing, Fan, Weijun, Shi, Lijie
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Phase Transition; Band Offset
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/172512
• المؤسسة: Nanyang Technological University

The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal...