Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction

Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction

The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal...

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Bibliographic Details
Main Authors: Du, Jingxue, Yang, Jing, Fan, Weijun, Shi, Lijie
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering
Phase Transition
Band Offset
Online Access:https://hdl.handle.net/10356/172512
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Institution: Nanyang Technological University
Language: English
Description
Summary:The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal phase transition is observed under both positive and negative electric field. The band offset of GeTe/SnSe van der Waals heterojunction can be controlled, and thus the potential barrier can be controlled by applying a gate voltage. Combined with the calculation of effective mass and absorption spectrum we predict that GeTe/SnSe van der Waals heterojunction has important applications in the fields of solar cell and photodetector devices.

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