Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction
The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/172512 |
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| Institution: | Nanyang Technological University |
| Language: | English |