Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells

• Main Author: Fan, Weijun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/101299; http://hdl.handle.net/10220/18409
• Institution: Nanyang Technological University

Band structures of tensile strained and n+ doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the Γ and L conduction subbands are obtained. The effects of tensile strain and n+ doping in Ge on direct bandgap optical gain and spontaneous radi...