Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells
Band structures of tensile strained and n+ doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the Γ and L conduction subbands are obtained. The effects of tensile strain and n+ doping in Ge on direct bandgap optical gain and spontaneous radi...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101299 http://hdl.handle.net/10220/18409 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |