Tensile strained ge pseudo-heterostructure quantum wells
Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transiti...
محفوظ في:
| المؤلف الرئيسي: | |
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| مؤلفون آخرون: | |
| التنسيق: | Final Year Project |
| اللغة: | English |
| منشور في: |
Nanyang Technological University
2020
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/140404 |
| الوسوم: |
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