Tensile strained ge pseudo-heterostructure quantum wells
Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transiti...
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| Format: | Final Year Project |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/140404 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transition at room temperature was observed and reported in heavy n-type doped tensile strained Ge-on-Si material recently.[1] Band structures of tensile strained and n+ doped Ge/Ge0.986Si0.014 quantum wells (QWs) are calculated by multiple-band k·p method[7]. In this work, we propose a Ge quantum well (QW) caused by the uniaxial tensile strain, which may be realized by the micro-bridge technique.[2,3] Because the QW is formed by Ge only, it is called as the Ge pseudo-heterostructure QW (PQW). |
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