Tensile strained ge pseudo-heterostructure quantum wells

Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transiti...

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Main Author: Chen, Mi
Other Authors: Fan Weijun
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2020
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Online Access:https://hdl.handle.net/10356/140404
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1404042023-07-07T18:43:55Z Tensile strained ge pseudo-heterostructure quantum wells Chen, Mi Fan Weijun School of Electrical and Electronic Engineering EWJFan@ntu.edu.sg Engineering::Electrical and electronic engineering Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transition at room temperature was observed and reported in heavy n-type doped tensile strained Ge-on-Si material recently.[1] Band structures of tensile strained and n+ doped Ge/Ge0.986Si0.014 quantum wells (QWs) are calculated by multiple-band k·p method[7]. In this work, we propose a Ge quantum well (QW) caused by the uniaxial tensile strain, which may be realized by the micro-bridge technique.[2,3] Because the QW is formed by Ge only, it is called as the Ge pseudo-heterostructure QW (PQW). Bachelor of Engineering (Electrical and Electronic Engineering) 2020-05-28T10:59:44Z 2020-05-28T10:59:44Z 2020 Final Year Project (FYP) https://hdl.handle.net/10356/140404 en P2038-182 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
spellingShingle Engineering::Electrical and electronic engineering
Chen, Mi
Tensile strained ge pseudo-heterostructure quantum wells
description Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transition at room temperature was observed and reported in heavy n-type doped tensile strained Ge-on-Si material recently.[1] Band structures of tensile strained and n+ doped Ge/Ge0.986Si0.014 quantum wells (QWs) are calculated by multiple-band k·p method[7]. In this work, we propose a Ge quantum well (QW) caused by the uniaxial tensile strain, which may be realized by the micro-bridge technique.[2,3] Because the QW is formed by Ge only, it is called as the Ge pseudo-heterostructure QW (PQW).
author2 Fan Weijun
author_facet Fan Weijun
Chen, Mi
format Final Year Project
author Chen, Mi
author_sort Chen, Mi
title Tensile strained ge pseudo-heterostructure quantum wells
title_short Tensile strained ge pseudo-heterostructure quantum wells
title_full Tensile strained ge pseudo-heterostructure quantum wells
title_fullStr Tensile strained ge pseudo-heterostructure quantum wells
title_full_unstemmed Tensile strained ge pseudo-heterostructure quantum wells
title_sort tensile strained ge pseudo-heterostructure quantum wells
publisher Nanyang Technological University
publishDate 2020
url https://hdl.handle.net/10356/140404
_version_ 1772828213055062016