Tensile strained ge pseudo-heterostructure quantum wells
Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transiti...
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sg-ntu-dr.10356-1404042023-07-07T18:43:55Z Tensile strained ge pseudo-heterostructure quantum wells Chen, Mi Fan Weijun School of Electrical and Electronic Engineering EWJFan@ntu.edu.sg Engineering::Electrical and electronic engineering Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transition at room temperature was observed and reported in heavy n-type doped tensile strained Ge-on-Si material recently.[1] Band structures of tensile strained and n+ doped Ge/Ge0.986Si0.014 quantum wells (QWs) are calculated by multiple-band k·p method[7]. In this work, we propose a Ge quantum well (QW) caused by the uniaxial tensile strain, which may be realized by the micro-bridge technique.[2,3] Because the QW is formed by Ge only, it is called as the Ge pseudo-heterostructure QW (PQW). Bachelor of Engineering (Electrical and Electronic Engineering) 2020-05-28T10:59:44Z 2020-05-28T10:59:44Z 2020 Final Year Project (FYP) https://hdl.handle.net/10356/140404 en P2038-182 application/pdf Nanyang Technological University |
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Engineering::Electrical and electronic engineering Chen, Mi Tensile strained ge pseudo-heterostructure quantum wells |
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Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transition at room temperature was observed and reported in heavy n-type doped tensile strained Ge-on-Si material recently.[1] Band structures of tensile strained and n+ doped Ge/Ge0.986Si0.014 quantum wells (QWs) are calculated by multiple-band k·p method[7]. In this work, we propose a Ge quantum well (QW) caused by the uniaxial tensile strain, which may be realized by the micro-bridge technique.[2,3] Because the QW is formed by Ge only, it is called as the Ge pseudo-heterostructure QW (PQW). |
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Fan Weijun |
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Fan Weijun Chen, Mi |
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Final Year Project |
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Chen, Mi |
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Chen, Mi |
title |
Tensile strained ge pseudo-heterostructure quantum wells |
title_short |
Tensile strained ge pseudo-heterostructure quantum wells |
title_full |
Tensile strained ge pseudo-heterostructure quantum wells |
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Tensile strained ge pseudo-heterostructure quantum wells |
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Tensile strained ge pseudo-heterostructure quantum wells |
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tensile strained ge pseudo-heterostructure quantum wells |
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Nanyang Technological University |
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2020 |
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https://hdl.handle.net/10356/140404 |
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