Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

10.1063/1.4943218

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Bibliographic Details
Main Authors: Lee, K.H, Bao, S, Wang, B, Wang, C, Yoon, S.F, Michel, J, Fitzgerald, E.A, Tan, C.S
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
Subjects:
Epitaxial films
Epitaxial growth
Semiconductor doping
Surface roughness
Temperature
Tensile strain
Analytical characterization
Dislocation densities
Germaniums (Ge)
High temperature
Low temperatures
Thermal cyclic annealing
Thermally induced
Threading dislocation densities
Germanium
Online Access:https://scholarbank.nus.edu.sg/handle/10635/183350
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/183350

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