Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing

Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing

10.1016/j.tsf.2005.09.046

Saved in:
Bibliographic Details
Main Authors: Liew, S.L., Balakrisnan, B., Chow, S.Y., Lai, M.Y., Wang, W.D., Lee, K.Y., Ho, C.S., Osipowicz, T., Chi, D.Z.
Other Authors: PHYSICS
Format: Conference or Workshop Item
Published: 2014
Subjects:
Erbium
Germanium
Rapid thermal processing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98732
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/98732

Similar Items