Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

10.1063/1.4943218

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Bibliographic Details
Main Authors:	Lee, K.H, Bao, S, Wang, B, Wang, C, Yoon, S.F, Michel, J, Fitzgerald, E.A, Tan, C.S
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	2020
Subjects:	Epitaxial films Epitaxial growth Semiconductor doping Surface roughness Temperature Tensile strain Analytical characterization Dislocation densities Germaniums (Ge) High temperature Low temperatures Thermal cyclic annealing Thermally induced Threading dislocation densities Germanium
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183350
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-183350
record_format	dspace
spelling	sg-nus-scholar.10635-1833502024-04-25T03:33:10Z Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer Lee, K.H Bao, S Wang, B Wang, C Yoon, S.F Michel, J Fitzgerald, E.A Tan, C.S ELECTRICAL AND COMPUTER ENGINEERING Epitaxial films Epitaxial growth Semiconductor doping Surface roughness Temperature Tensile strain Analytical characterization Dislocation densities Germaniums (Ge) High temperature Low temperatures Thermal cyclic annealing Thermally induced Threading dislocation densities Germanium 10.1063/1.4943218 AIP Advances 6 2 25028 2020-11-10T08:01:11Z 2020-11-10T08:01:11Z 2016 Article Lee, K.H, Bao, S, Wang, B, Wang, C, Yoon, S.F, Michel, J, Fitzgerald, E.A, Tan, C.S (2016). Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer. AIP Advances 6 (2) : 25028. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4943218 21583226 https://scholarbank.nus.edu.sg/handle/10635/183350 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Epitaxial films Epitaxial growth Semiconductor doping Surface roughness Temperature Tensile strain Analytical characterization Dislocation densities Germaniums (Ge) High temperature Low temperatures Thermal cyclic annealing Thermally induced Threading dislocation densities Germanium
spellingShingle	Epitaxial films Epitaxial growth Semiconductor doping Surface roughness Temperature Tensile strain Analytical characterization Dislocation densities Germaniums (Ge) High temperature Low temperatures Thermal cyclic annealing Thermally induced Threading dislocation densities Germanium Lee, K.H Bao, S Wang, B Wang, C Yoon, S.F Michel, J Fitzgerald, E.A Tan, C.S Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
description	10.1063/1.4943218
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Lee, K.H Bao, S Wang, B Wang, C Yoon, S.F Michel, J Fitzgerald, E.A Tan, C.S
format	Article
author	Lee, K.H Bao, S Wang, B Wang, C Yoon, S.F Michel, J Fitzgerald, E.A Tan, C.S
author_sort	Lee, K.H
title	Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
title_short	Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
title_full	Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
title_fullStr	Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
title_full_unstemmed	Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
title_sort	reduction of threading dislocation density in ge/si using a heavily as-doped ge seed layer
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/183350
_version_	1800914692310302720

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

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