Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

• Main Authors: Lee, K.H, Bao, S, Wang, B, Wang, C, Yoon, S.F, Michel, J, Fitzgerald, E.A, Tan, C.S
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: 2020
• Subjects: Epitaxial films; Epitaxial growth; Semiconductor doping; Surface roughness; Temperature; Tensile strain; Analytical characterization; Dislocation densities; Germaniums (Ge); High temperature; Low temperatures; Thermal cyclic annealing; Thermally induced; Threading dislocation densities; Germanium
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/183350
• Institution: National University of Singapore

10.1063/1.4943218