Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure

Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure

10.1016/S0167-9317(03)00050-9

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Bibliographic Details
Main Authors: Heng, C.L., Teo, L.W., Ho, V., Tay, M.S., Lei, Y., Choi, W.K., Chim, W.K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Charge storage
Ge nanocrystals
Rapid thermal annealing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83684
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83684

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