Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure

• Main Authors: Heng, C.L., Teo, L.W., Ho, V., Tay, M.S., Lei, Y., Choi, W.K., Chim, W.K.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Charge storage; Ge nanocrystals; Rapid thermal annealing
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83684
• Institution: National University of Singapore

10.1016/S0167-9317(03)00050-9