Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure

10.1016/S0167-9317(03)00050-9

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Main Authors:	Heng, C.L., Teo, L.W., Ho, V., Tay, M.S., Lei, Y., Choi, W.K., Chim, W.K.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Charge storage Ge nanocrystals Rapid thermal annealing
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83684
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83684
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spelling	sg-nus-scholar.10635-836842023-10-25T20:08:34Z Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure Heng, C.L. Teo, L.W. Ho, V. Tay, M.S. Lei, Y. Choi, W.K. Chim, W.K. ELECTRICAL & COMPUTER ENGINEERING Charge storage Ge nanocrystals Rapid thermal annealing 10.1016/S0167-9317(03)00050-9 Microelectronic Engineering 66 1-4 218-223 MIENE 2014-10-07T04:44:00Z 2014-10-07T04:44:00Z 2003-04 Conference Paper Heng, C.L., Teo, L.W., Ho, V., Tay, M.S., Lei, Y., Choi, W.K., Chim, W.K. (2003-04). Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure. Microelectronic Engineering 66 (1-4) : 218-223. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-9317(03)00050-9 01679317 http://scholarbank.nus.edu.sg/handle/10635/83684 000182725500035 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Charge storage Ge nanocrystals Rapid thermal annealing
spellingShingle	Charge storage Ge nanocrystals Rapid thermal annealing Heng, C.L. Teo, L.W. Ho, V. Tay, M.S. Lei, Y. Choi, W.K. Chim, W.K. Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
description	10.1016/S0167-9317(03)00050-9
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Heng, C.L. Teo, L.W. Ho, V. Tay, M.S. Lei, Y. Choi, W.K. Chim, W.K.
format	Conference or Workshop Item
author	Heng, C.L. Teo, L.W. Ho, V. Tay, M.S. Lei, Y. Choi, W.K. Chim, W.K.
author_sort	Heng, C.L.
title	Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
title_short	Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
title_full	Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
title_fullStr	Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
title_full_unstemmed	Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
title_sort	effects of rapid thermal annealing time and ambient temperature on the charge storage capability of sio2/pure ge/rapid thermal oxide memory structure
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83684
_version_	1781784381918019584

Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure

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