Heng, C., Teo, L., Ho, V., Tay, M., Lei, Y., Choi, W., . . . ENGINEERING, E. &. C. (2014). Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure.

Heng, C.L., L.W Teo, V. Ho, M.S Tay, Y. Lei, W.K Choi, W.K Chim, and ELECTRICAL & COMPUTER ENGINEERING. Effects of Rapid Thermal Annealing Time and Ambient Temperature On the Charge Storage Capability of SiO2/pure Ge/rapid Thermal Oxide Memory Structure. 2014.

Heng, C.L., et al. Effects of Rapid Thermal Annealing Time and Ambient Temperature On the Charge Storage Capability of SiO2/pure Ge/rapid Thermal Oxide Memory Structure. 2014.