Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells

• Main Author: Fan, Weijun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/96418; http://hdl.handle.net/10220/9931
• Institution: Nanyang Technological University

A ten-band k ∙p Hamiltonian for III-V-N dilute nitride semiconductor quantum wells (QWs) grown on the (11N)-oriented substrates is presented. The energy dispersion curves, optical transition matrix elements, internal piezoelectric field, and optical gain of InGaAsN/GaAs on the (110), (111), (113)...