Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells
A ten-band k ∙p Hamiltonian for III-V-N dilute nitride semiconductor quantum wells (QWs) grown on the (11N)-oriented substrates is presented. The energy dispersion curves, optical transition matrix elements, internal piezoelectric field, and optical gain of InGaAsN/GaAs on the (110), (111), (113)...
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| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/96418 http://hdl.handle.net/10220/9931 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | A ten-band k ∙p Hamiltonian for III-V-N dilute nitride semiconductor quantum wells (QWs) grown
on the (11N)-oriented substrates is presented. The energy dispersion curves, optical transition
matrix elements, internal piezoelectric field, and optical gain of InGaAsN/GaAs on the (110),
(111), (113), and (11∞)-oriented substrates are investigated including band-anti-crossing, strain,
and piezoelectric field effects. The band structures and optical gain are sensitive to the substrate
orientation. The fundamental transition energy is the largest for the (111)-oriented QW and the
smallest for (11∞)-oriented QW. The absolute values of internal piezoelectric field in the well and
barrier layers reach the maximum for the (111)-QW, and zero for the (110) and (11∞)-oriented
QWs. There exists an injection current density turning point. When the injection current density is
below the turning point, the (111)-oriented QW has the largest peak gain. At the larger injection
current density, the (11∞)-oriented QW has the largest peak gain. |
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