Nanoscale characterization and analysis of localized degradation and breakdown of high-k dielectric stacks
Degradation and breakdown of high-κ (HK) dielectrics in advanced complementary metal-oxide-semiconductor (CMOS) technology node is one of the major challenges, due to its polycrystalline microstructure upon post-deposition annealing. Grain boundaries (GBs) in polycrystalline HK dielectrics with a hi...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2013
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| 在線閱讀: | http://hdl.handle.net/10356/53914 |
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| 機構: | Nanyang Technological University |
| 語言: | English |