Self-gating in semiconductor electrocatalysis

• Main Authors: He, Yongmin, He, Qiyuan, Wang, Luqing, Zhu, Chao, Golani, Prafful, Handoko, Albertus D, Yu, Xuechao, Gao, Caitian, Ding, Mengning, Wang, Xuewen, Liu, Fucai, Zeng, Qingsheng, Yu, Peng, Guo, Shasha, Yakobson, Boris I, Wang, Liang, Seh, Zhi Wei, Zhang, Zhuhua, Wu, Minghong, Wang, Qi Jie, Zhang, Hua, Liu, Zheng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Electrocatalysis; Semiconductor Catalysts
• Online Access: https://hdl.handle.net/10356/138700
• Institution: Nanyang Technological University

The semiconductor-electrolyte interface dominates the behaviours of semiconductor electrocatalysis, which has been modelled as a Schottky-analogue junction according to classical electron transfer theories. However, this model cannot be used to explain the extremely high carrier accumulations in ult...