Self-gating in semiconductor electrocatalysis

• Main Authors: He, Yongmin, He, Qiyuan, Wang, Luqing, Zhu, Chao, Golani, Prafful, Handoko, Albertus D, Yu, Xuechao, Gao, Caitian, Ding, Mengning, Wang, Xuewen, Liu, Fucai, Zeng, Qingsheng, Yu, Peng, Guo, Shasha, Yakobson, Boris I, Wang, Liang, Seh, Zhi Wei, Zhang, Zhuhua, Wu, Minghong, Wang, Qi Jie, Zhang, Hua, Liu, Zheng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Electrocatalysis; Semiconductor Catalysts
• Online Access: https://hdl.handle.net/10356/138700
• Institution: Nanyang Technological University

The semiconductor-electrolyte interface dominates the behaviours of semiconductor electrocatalysis, which has been modelled as a Schottky-analogue junction according to classical electron transfer theories. However, this model cannot be used to explain the extremely high carrier accumulations in ultrathin semiconductor catalysis observed in our work. Inspired by the recently developed ion-controlled electronics, we revisit the semiconductor-electrolyte interface and unravel a universal self-gating phenomenon through microcell-based in situ electronic/electrochemical measurements to clarify the electronic-conduction modulation of semiconductors during the electrocatalytic reaction. We then demonstrate that the type of semiconductor catalyst strongly correlates with their electrocatalysis; that is, n-type semiconductor catalysts favour cathodic reactions such as the hydrogen evolution reaction, p-type ones prefer anodic reactions such as the oxygen evolution reaction and bipolar ones tend to perform both anodic and cathodic reactions. Our study provides new insight into the electronic origin of the semiconductor-electrolyte interface during electrocatalysis, paving the way for designing high-performance semiconductor catalysts.