Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress
Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor f...
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Main Authors: | , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/101175 http://hdl.handle.net/10220/18307 |
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Institution: | Nanyang Technological University |
Language: | English |
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