Reliability modeling for ULSI interconnects

• Main Author: Hou, Yue Jin
• Other Authors: Tan Cher Ming
• Format: Theses and Dissertations
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/42101
• Institution: Nanyang Technological University

Electromigration (EM) and stress-induced voiding (SIV) are the two major reliability concerns for metal interconnects in integrated circuits. In particular, with the dimensions of interconnect scaled into nano regime and the inclusion of low-k materials as dielectrics, the reliability aspects for on...