Realistic modeling of electromigration in today’s ULSI interconnections

• 主要作者: Li, Wei
• 其他作者: Tan Cher Ming
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2009
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• 在線閱讀: https://hdl.handle.net/10356/18900
• 機構: Nanyang Technological University

IC architecture makes extensively use of multiple interconnect levels with many vias that enable electrical current to flow between each level. A common failure mechanism in interconnections is the formation and the growth of voids and/or hillocks which may span across the line width and sever (or s...