Applications of finite element methods for reliability study of ULSI interconnections

• Main Authors: Tan, Cher Ming, Li, Wei, Gan, Zhenghao
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/97730; http://hdl.handle.net/10220/11155
• Institution: Nanyang Technological University

Three main failure mechanisms of ULSI interconnects are the electromigration (EM), stress induced voiding (SIV) and low-k dielectric breakdown. Reliability tests for these mechanisms are too long to meet the development time requirement, and the underlying dominant mechanisms cannot be identified, r...