Applications of finite element methods for reliability study of ULSI interconnections
Three main failure mechanisms of ULSI interconnects are the electromigration (EM), stress induced voiding (SIV) and low-k dielectric breakdown. Reliability tests for these mechanisms are too long to meet the development time requirement, and the underlying dominant mechanisms cannot be identified, r...
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Main Authors: | Tan, Cher Ming, Li, Wei, Gan, Zhenghao |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/97730 http://hdl.handle.net/10220/11155 |
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Institution: | Nanyang Technological University |
Language: | English |
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