Time dependent dielectric breakdown in copper low-k interconnects : mechanisms and reliability models

The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra large-scale integration is reviewed. The loss of insulation between neighboring interconnects represents an emerging back end-of-the-line reliability issue that is not fully understood. After describ...

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Bibliographic Details
Main Author: Wong, Terence Kin Shun
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/97782
http://hdl.handle.net/10220/10908
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Institution: Nanyang Technological University
Language: English