Time dependent dielectric breakdown in copper low-k interconnects : mechanisms and reliability models
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra large-scale integration is reviewed. The loss of insulation between neighboring interconnects represents an emerging back end-of-the-line reliability issue that is not fully understood. After describ...
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Format: | Article |
Language: | English |
Published: |
2013
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Online Access: | https://hdl.handle.net/10356/97782 http://hdl.handle.net/10220/10908 |
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Institution: | Nanyang Technological University |
Language: | English |