Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure

Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure

Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability issues in Cu/low-k technology development due to its weaker intrinsic breakdown strength compared to SiO2 dielectrics. With continuous technology scaling, this problem is further exacerbated for Cu/ult...

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Bibliographic Details
Main Authors: Lam, Jeffrey C. K., Huang, Maggie Y. M., Ng, Tsu Hau, Mohammed Khalid Dawood, Zhang, Fan, Du, Anyan, Sun, Handong, Shen, Zexiang, Mai, Zhihong
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Science::Mathematics::Applied mathematics
Online Access:https://hdl.handle.net/10356/96542
http://hdl.handle.net/10220/9881
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/96542
http://hdl.handle.net/10220/9881

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